Integration of Single Oriented Oxide Superlattices on Silicon Using Various Template Techniques
نویسندگان
چکیده
منابع مشابه
Electronic phase diagram of single-element silicon "strain" superlattices.
The evidence that the band gap of Si changes significantly with strain suggests that by alternating regions of strained and unstrained Si one creates a single-element electronic heterojunction superlattice (SL), with the carrier confinement defined by strain rather than by the chemical differences in conventional compositional SLs. Using first-principles calculations, we map out the electronic ...
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1 Centro de Investigación en Química Biológica y Materiales Moleculares, Universidad de Santiago de Compostela, Santiago de Compostela, Spain, 2 Institut des Nanotechnologies de Lyon, Centre National de la Recherche Scientifique École Centrale de Lyon, Lyon, France, 3 Consejo Superior de Investigaciones Científicas, Institut de Ciéncia de Materials de Barcelona, Barcelona, Spain, 4 Bio and Soft...
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All rights reserved INFORMATION TO ALL USERS The quality of this reproduction is dependent upon the quality of the copy submitted. In the unlikely event that the author did not send a complete manuscript and there are missing pages, these will be noted. Also, if material had to be removed, a note will indicate the deletion. Modern silicon technology offers unprecedented spatial and temporal con...
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ژورنال
عنوان ژورنال: ACS Applied Materials & Interfaces
سال: 2020
ISSN: 1944-8244,1944-8252
DOI: 10.1021/acsami.0c10579